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300mV @ 500µA, 10mA,Vce Saturation (Max) @ Ib, Ic

200MHz,Frequency - Transition

TO-226-3, TO-92-3 (TO-226AA),Package / Case

10 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

FJN4302RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4313RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 68 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4314RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 68 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4308RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 56 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4304RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 68 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4303RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 56 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4307RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 68 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4306RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 68 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4305RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 30 @ 5mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJN4301RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
FJN4302RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4313RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	68 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4314RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	68 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4308RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	56 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4304RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	68 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4303RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	56 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4307RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	68 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4306RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	68 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4305RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	30 @ 5mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJN4301RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)

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