| Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMMT2907A-7 | DIODES INC | 2 PNP (Dual) | 600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 900mW | 307MHz | Surface Mount | SOT-23-6 | |
| BSR16,215 | NXP SEMICONDUCTORS | PNP | 600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 250mW | 200MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| 2N2906A | MICROSEMI COMMERCIAL BUSINESS UNIT | PNP | 600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 40 @ 150mA, 10V | 400mW | - | - | - | |
| 2N2906AUB | MICROSEMI COMMERCIAL BUSINESS UNIT | PNP | 600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 40 @ 150mA, 10V | 400mW | - | - | - | |
| JAN2N2219 | MICROSEMI CORP | NPN | 800mA | 30V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 50 @ 1mA, 10V | 800mW | - | Through Hole | TO-205AD, TO-39-3 Metal Can | |
| JAN2N2219A | MICROSEMI CORP | NPN | 800mA | 30V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 50 @ 1mA, 10V | 800mW | - | Through Hole | TO-205AD, TO-39-3 Metal Can | |
| JAN2N2219AL | MICROSEMI CORP | NPN | 800mA | 30V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 50 @ 1mA, 10V | 800mW | - | Through Hole | TO-205AA, TO-5-3 Metal Can |
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