830mW,Power - Max
TO-226-3, TO-92-3 (TO-226AA),Package / Case
14 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BF420,112 NXP SEMICONDUCTORS
NPN 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BF421,112 NXP SEMICONDUCTORS
PNP 50mA 300V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BF423,112 NXP SEMICONDUCTORS
PNP 50mA 250V 600mV @ 5mA, 30mA - 50 @ 25mA, 20V 830mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC879,112 NXP SEMICONDUCTORS
NPN - Darlington 1A 80V 1.8V @ 1mA, 1A 50nA 2000 @ 500mA, 10V 830mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC368,112 NXP SEMICONDUCTORS
NPN 1A 20V 500mV @ 100mA, 1A - 85 @ 500mA, 1V 830mW 170MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC369,112 NXP SEMICONDUCTORS
PNP 1A 20V 500mV @ 100mA, 1A - 85 @ 500mA, 1V 830mW 140MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC635,112 NXP SEMICONDUCTORS
NPN 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC638,112 NXP SEMICONDUCTORS
PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC639,112 NXP SEMICONDUCTORS
NPN 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC640,112 NXP SEMICONDUCTORS
PNP 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 145MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)