RAM,Format - Memory
150ns,Speed
65 parts found
Part Numbers Manufacturer Name Datasheet Format - Memory Memory Type Memory Size Speed Interface Voltage - Supply Operating Temperature Package / Case
MB85R1001ANC-GE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 1M (128K x 8) 150ns Parallel 3 V ~ 3.6 V -40?C ~ 85?C 48-TFSOP (0.488", 12.40mm Width)
MB85R256FPF-G-BNDE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 256K (32K x 8) 150ns Parallel 2.7 V ~ 3.6 V -40?C ~ 85?C 28-SOIC (0.342", 8.69mm Width)
MB85R256FPFCN-G-BNDE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 256K (32K x 8) 150ns Parallel 2.7 V ~ 3.6 V -40?C ~ 85?C 28-TSSOP (0.465", 11.80mm Width)
MB85R1002ANC-GE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 1M (64K x 16) 150ns Parallel 3 V ~ 3.6 V -40?C ~ 85?C 48-TFSOP (0.488", 12.40mm Width)
MB85R4001ANC-GE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 4M (512K x 8) 150ns Parallel 3 V ~ 3.6 V -40?C ~ 85?C 48-TFSOP (0.488", 12.40mm Width)
MB85R4002ANC-GE1 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 4M (256K x 16) 150ns Parallel 3 V ~ 3.6 V -40?C ~ 85?C 48-TFSOP (0.488", 12.40mm Width)
MB85R256FPNF-G-JNERE2 FUJITSU SEMICONDUCTOR AMERICA INC
RAM FRAM (Ferroelectric RAM) 256K (32K x 8) 150ns Parallel 2.7 V ~ 3.6 V -40?C ~ 85?C 28-SOIC (0.342", 8.69mm Width)
IDT6116LA150DB INTEGRATED DEVICE TECHNOLOGY INC
RAM SRAM - Asynchronous 16K (2K x 8) 150ns Parallel 4.5 V ~ 5.5 V -55?C ~ 125?C 24-CDIP (0.600", 15.24mm)
IDT6116LA150TDB INTEGRATED DEVICE TECHNOLOGY INC
RAM SRAM - Asynchronous 16K (2K x 8) 150ns Parallel 4.5 V ~ 5.5 V -55?C ~ 125?C 24-CDIP (0.300", 7.62mm)
IDT6116SA150DB INTEGRATED DEVICE TECHNOLOGY INC
RAM SRAM - Asynchronous 16K (2K x 8) 150ns Parallel 4.5 V ~ 5.5 V -55?C ~ 125?C 24-CDIP (0.600", 15.24mm)