MB85R1001ANC-GE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
1M (128K x 8)
|
150ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFSOP (0.488", 12.40mm Width)
|
MB85R256FPF-G-BNDE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
256K (32K x 8)
|
150ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
28-SOIC (0.342", 8.69mm Width)
|
MB85R256FPFCN-G-BNDE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
256K (32K x 8)
|
150ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
28-TSSOP (0.465", 11.80mm Width)
|
MB85R1002ANC-GE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
1M (64K x 16)
|
150ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFSOP (0.488", 12.40mm Width)
|
MB85R4001ANC-GE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
4M (512K x 8)
|
150ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFSOP (0.488", 12.40mm Width)
|
MB85R4002ANC-GE1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
4M (256K x 16)
|
150ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFSOP (0.488", 12.40mm Width)
|
MB85R256FPNF-G-JNERE2 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
RAM
|
FRAM (Ferroelectric RAM)
|
256K (32K x 8)
|
150ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
28-SOIC (0.342", 8.69mm Width)
|
IDT6116LA150DB |
INTEGRATED DEVICE TECHNOLOGY INC |
|
RAM
|
SRAM - Asynchronous
|
16K (2K x 8)
|
150ns
|
Parallel
|
4.5 V ~ 5.5 V
|
-55?C ~ 125?C
|
24-CDIP (0.600", 15.24mm)
|
IDT6116LA150TDB |
INTEGRATED DEVICE TECHNOLOGY INC |
|
RAM
|
SRAM - Asynchronous
|
16K (2K x 8)
|
150ns
|
Parallel
|
4.5 V ~ 5.5 V
|
-55?C ~ 125?C
|
24-CDIP (0.300", 7.62mm)
|
IDT6116SA150DB |
INTEGRATED DEVICE TECHNOLOGY INC |
|
RAM
|
SRAM - Asynchronous
|
16K (2K x 8)
|
150ns
|
Parallel
|
4.5 V ~ 5.5 V
|
-55?C ~ 125?C
|
24-CDIP (0.600", 15.24mm)
|