8.9nC @ 10V,Gate Charge (Qg) @ Vgs
Surface Mount,Mounting Type
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
HTMN5130SSD-13 DIODES INC
2 P-Channel (Dual) 55V 2.6A (Ta) 200 mOhm @ 3A, 10V 3V @ 250µA 8.9nC @ 10V 218.7pF @ 25V 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRFR9210PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRLPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TR VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRL VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRR VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRPBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 200V 1.9A (Tc) 3 Ohm @ 1.1A, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63