10.4nC @ 4.5V,Gate Charge (Qg) @ Vgs
Surface Mount,Mounting Type
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN2029USD-13 DIODES INC
2 N-Channel (Dual) 20V 5.8A 25 mOhm @ 6.5A, 4.5V 1.5V @ 250µA 10.4nC @ 4.5V 1171pF @ 10V 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SSM6J215FE(TE85L,F TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 3.4A (Ta) 59 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 500mW Surface Mount SOT-563, SOT-666
SSM3J331R,LF TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 4A (Ta) 55 mOhm @ 3A, 4.5V 1V @ 1mA 10.4nC @ 4.5V 630pF @ 10V 1W Surface Mount SOT-23-3 Flat Leads
AOC2802 ALPHA & OMEGA SEMICONDUCTOR LTD
2 N-Channel (Dual) Common Drain 20V - - - 10.4nC @ 4.5V - 1.3W Surface Mount 4-UFBGA, WLCSP
NTLUS3A39PZTAG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 600mW Surface Mount 6-UFDFN Exposed Pad
NTLUS3A39PZTBG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 3.4A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10.4nC @ 4.5V 920pF @ 15V 600mW Surface Mount 6-UFDFN Exposed Pad
RJK03M5DNS-00#J5 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 25A - - 10.4nC @ 4.5V 1890pF @ 10V 15W Surface Mount 8-WFDFN Exposed Pad
RJK03M5DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 30A 6.5 mOhm @ 15A, 10V - 10.4nC @ 4.5V 1890pF @ 10V 30W Surface Mount 8-WFDFN Exposed Pad