| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD75205W1015 | TEXAS INSTRUMENTS INC | 2 P-Channel (Dual) | 20V | 1.2A | 120 mOhm @ 1A, 4.5V | 850mV @ 250µA | 2.2nC @ 4.5V | 265pF @ 10V | 750mW | Surface Mount | 6-UFBGA, DSBGA | |
| SI2312BDS-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 20V | 3.9A (Ta) | 31 mOhm @ 5A, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2312BDS-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 20V | 3.9A (Ta) | 31 mOhm @ 5A, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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