30V,Drain to Source Voltage (Vdss)
730mW,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3016LFDE-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 25.1nC @ 10V 1415pF @ 15V 730mW Surface Mount 6-UDFN Exposed Pad
DMN3016LFDE-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 25.1nC @ 10V 1415pF @ 15V 730mW Surface Mount 6-UDFN Exposed Pad
NTMD3P03R2G ON SEMICONDUCTOR
2 P-Channel (Dual) 30V 2.34A 85 mOhm @ 3.05A, 10V 2.5V @ 250µA 25nC @ 10V 750pF @ 24V 730mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS3P03R2 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.34A (Ta) 85 mOhm @ 3.05A, 10V 2.5V @ 250µA 25nC @ 10V 750pF @ 24V 730mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS3P03R2G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.34A (Ta) 85 mOhm @ 3.05A, 10V 2.5V @ 250µA 25nC @ 10V 750pF @ 24V 730mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMSD3P303R2G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.34A (Ta) 85 mOhm @ 3.05A, 10V 2.5V @ 250µA 25nC @ 10V 750pF @ 24V 730mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NVMD3P03R2G ON SEMICONDUCTOR
2 P-Channel (Dual) 30V 2.34A 85 mOhm @ 3.05A, 10V 2.5V @ 250µA 25nC @ 10V 750pF @ 24V 730mW Surface Mount 8-SOIC (0.154", 3.90mm Width)