40V,Drain to Source Voltage (Vdss)
1.1W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMP4A57E6TA DIODES INC
MOSFET P-Channel, Metal Oxide 40V 2.9A (Ta) 80 mOhm @ 4A, 10V 3V @ 250µA 15.8nC @ 10V 833pF @ 20V 1.1W Surface Mount SOT-23-6
SI4447DY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 3.3A (Ta) 54 mOhm @ 4.5A, 10V 2.2V @ 250µA 14nC @ 4.5V 805pF @ 20V 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4447DY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 3.3A (Ta) 72 mOhm @ 4.5A, 15V 2.2V @ 250µA 14nC @ 4.5V 805pF @ 20V 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4446DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 3.9A (Ta) 40 mOhm @ 5.2A, 10V 1.6V @ 250µA 12nC @ 4.5V 700pF @ 20V 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4446DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 3.9A (Ta) 40 mOhm @ 5.2A, 10V 1.6V @ 250µA 12nC @ 4.5V 700pF @ 20V 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4942DY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 5.3A 21 mOhm @ 7.4A, 10V 3V @ 250µA 32nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4942DY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 5.3A 21 mOhm @ 7.4A, 10V 3V @ 250µA 32nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4940DY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 4.2A 36 mOhm @ 5.7A, 10V 1V @ 250µA 14nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4940DY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 40V 4.2A 36 mOhm @ 5.7A, 10V 1V @ 250µA 14nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)