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1.07W,Power - Max

3 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

NTD4960N-1G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 1.07W Through Hole TO-251-3 Short Leads, IPak, TO-251AA

NTD4960N-35G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 1.07W Through Hole TO-251-3 Stub Leads, IPak

NTD4960NT4G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 1.07W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
NTD4960N-1G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	8.9A (Ta), 55A (Tc)	8 mOhm @ 30A, 10V	2.5V @ 250µA	22nC @ 10V	1300pF @ 15V	1.07W	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA
NTD4960N-35G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	8.9A (Ta), 55A (Tc)	8 mOhm @ 30A, 10V	2.5V @ 250µA	22nC @ 10V	1300pF @ 15V	1.07W	Through Hole	TO-251-3 Stub Leads, IPak
NTD4960NT4G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	8.9A (Ta), 55A (Tc)	8 mOhm @ 30A, 10V	2.5V @ 250µA	22nC @ 10V	1300pF @ 15V	1.07W	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63

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