| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB160N04S3-H2 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 160A (Tc) | 2.1 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 214W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| IPB100N04S3-03 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.5 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 214W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPP100N04S3-03 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 214W | Through Hole | TO-220-3 | |
| IPI100N04S3-03 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 214W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| NP82N055PUG-E1-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 82A (Tc) | 5.2 mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | 9600pF @ 25V | 1.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NP82N055MUG-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 82A | 6 mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | 9600pF @ 25V | 1.8W | Through Hole | TO-220-3 Full Pack | |
| NP82N055NUG-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 82A (Tc) | 6 mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | 9600pF @ 25V | 1.8W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
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