| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC1001 | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10.5nC @ 5V | 800pF @ 50V | - | Surface Mount | Die | |
| IRFB4019PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 150V | 17A (Tc) | 95 mOhm @ 10A, 10V | 4.9V @ 50µA | 20nC @ 10V | 800pF @ 50V | 80W | Through Hole | TO-220-3 | |
| STD11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 110W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STP11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 110W | Through Hole | TO-220-3 | |
| STFI11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 25W | Through Hole | TO-262-3 Full Pack, I²Pak | |
| STF11NM65N | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 25W | Through Hole | TO-220-3 Full Pack |
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