| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD7N25LZTM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 250V | 6.2A (Tc) | 550 mOhm @ 3.1A, 10V | 2V @ 250µA | 16nC @ 10V | 635pF @ 25V | 56W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IXTY4N60P | IXYS CORP | MOSFET N-Channel, Metal Oxide | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 5.5V @ 100µA | 13nC @ 10V | 635pF @ 25V | 89W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IXTP4N60P | IXYS CORP | MOSFET N-Channel, Metal Oxide | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 5.5V @ 100µA | 13nC @ 10V | 635pF @ 25V | 89W | Through Hole | TO-220-3 | |
| IXTA4N60P | IXYS CORP | MOSFET N-Channel, Metal Oxide | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 5.5V @ 100µA | 13nC @ 10V | 635pF @ 25V | 89W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PHX18NQ11T,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 110V | 12.5A (Ta) | 90 mOhm @ 9A, 10V | 4V @ 1mA | 21nC @ 10V | 635pF @ 25V | 31.2W | Through Hole | TO-220-3 Isolated Tab |
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