4V @ 1mA,Vgs(th) (Max) @ Id
90nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXKC13N80C IXYS CORP
MOSFET N-Channel, Metal Oxide 800V 13A (Tc) 290 mOhm @ 9A, 10V 4V @ 1mA 90nC @ 10V 2300pF @ 25V - Through Hole -
GWM160-0055P3 IXYS CORP
6 N-Channel (3-Phase Bridge) 55V 160A 3 mOhm @ 100A, 10V 4V @ 1mA 90nC @ 10V - - Surface Mount -
PSMN015-100P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Through Hole TO-220-3
PSMN015-110P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 75A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Through Hole TO-220-3
PSMN015-100B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB