40V,Drain to Source Voltage (Vdss)
71nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFU3504PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 30A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 140W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
IRFR3504PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 30A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 140W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3504TRLPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 30A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 140W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3504TRRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 30A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 140W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3504TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 30A (Tc) 9.2 mOhm @ 30A, 10V 4V @ 250µA 71nC @ 10V 2150pF @ 25V 140W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN2R8-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.8 mOhm @ 10A, 10V 4V @ 1mA 71nC @ 10V 4491pF @ 20V 211W Through Hole TO-220-3
PSMN2R8-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tmb) 2.9 mOhm @ 10A, 10V 4V @ 1mA 71nC @ 10V 4491pF @ 20V 211W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIR644DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 60A (Tc) 2.7 mOhm @ 20A, 10V 2.2V @ 250µA 71nC @ 10V 3200pF @ 20V 69W Surface Mount PowerPAK® SO-8