Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
STP100N10F7 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 100V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4.5V @ 250µA | 61nC @ 10V | 4369pF @ 50V | 150W | Through Hole | TO-220-3 | |
IXTP90N055T | IXYS CORP | MOSFET N-Channel, Metal Oxide | 55V | 90A (Tc) | 8.8 mOhm @ 25A, 10V | 4V @ 50µA | 61nC @ 10V | 2500pF @ 25V | 176W | Through Hole | TO-220-3 | |
PHP45NQ10T,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 47A | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | 2600pF @ 25V | 150W | Through Hole | TO-220-3 | |
PHP45NQ10TA,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 47A (Tc) | 25 mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | 2600pF @ 25V | 150W | Through Hole | TO-220-3 | |
IRF9540 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 150W | Through Hole | TO-220-3 | |
IRF9540PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 150W | Through Hole | TO-220-3 |