61nC @ 10V,Gate Charge (Qg) @ Vgs
TO-220-3,Package / Case
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STP100N10F7 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 80A (Tc) 8 mOhm @ 40A, 10V 4.5V @ 250µA 61nC @ 10V 4369pF @ 50V 150W Through Hole TO-220-3
IXTP90N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 90A (Tc) 8.8 mOhm @ 25A, 10V 4V @ 50µA 61nC @ 10V 2500pF @ 25V 176W Through Hole TO-220-3
PHP45NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 47A 25 mOhm @ 25A, 10V 4V @ 1mA 61nC @ 10V 2600pF @ 25V 150W Through Hole TO-220-3
PHP45NQ10TA,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 47A (Tc) 25 mOhm @ 25A, 10V 4V @ 1mA 61nC @ 10V 2600pF @ 25V 150W Through Hole TO-220-3
IRF9540 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 100V 19A (Tc) 200 mOhm @ 11A, 10V 4V @ 250µA 61nC @ 10V 1400pF @ 25V 150W Through Hole TO-220-3
IRF9540PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 100V 19A (Tc) 200 mOhm @ 11A, 10V 4V @ 250µA 61nC @ 10V 1400pF @ 25V 150W Through Hole TO-220-3