6.8nC @ 4.5V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3056LSS-13 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 7.1A 45 mOhm @ 6A, 10V 2.1V @ 250µA 6.8nC @ 4.5V 722pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRLML6344TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 5A (Ta) 29 mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8nC @ 4.5V 650pF @ 25V 1.3W Surface Mount TO-236-3, SC-59, SOT-23-3
DMP3056LDM-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 5A (Ta) 45 mOhm @ 4.3A, 10V 2.1V @ 250µA 6.8nC @ 4.5V 722pF @ 25V 1.25W Surface Mount SOT-23-6
NTD4815NH-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6.9A (Ta), 35A (Tc) 15 mOhm @ 30A, 10V 2.5V @ 250µA 6.8nC @ 4.5V 845pF @ 12V 1.26W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
NTD4815NH-35G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6.9A (Ta), 35A (Tc) 15 mOhm @ 30A, 10V 2.5V @ 250µA 6.8nC @ 4.5V 845pF @ 12V 1.26W Through Hole TO-251-3 Stub Leads, IPak
NTD4815NHT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6.9A (Ta), 35A (Tc) 15 mOhm @ 30A, 10V 2.5V @ 250µA 6.8nC @ 4.5V 845pF @ 12V 1.26W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0366DSP-00#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 11.7 mOhm @ 5.5A, 10V - 6.8nC @ 4.5V 1010pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)