| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD7N20TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 5A (Tc) | 690 mOhm @ 2.5A, 10V | 5V @ 250µA | 6.7nC @ 10V | 250pF @ 25V | 43W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| DMP3120L-7 | DIODES INC | MOSFET P-Channel, Metal Oxide | 30V | 2.8A (Ta) | 120 mOhm @ 2.8A, 4.5V | 1.4V @ 250µA | 6.7nC @ 10V | 285pF @ 15V | 1.4W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| IPD60R2K0C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 2.4A (Tc) | 2 Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | 140pF @ 100V | 22.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPU60R2K0C6BKMA1 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 2.4A (Tc) | 2 Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | 140pF @ 100V | 22.3W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| CSD15571Q2 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 20V | 22A (Ta) | 15 mOhm @ 5A, 10V | 1.9V @ 250µA | 6.7nC @ 10V | 419pF @ 10V | 2.5W | Surface Mount | 6-WDFN Exposed Pad | |
| SI2304DDS-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 3.3A (Ta), 3.6A (Tc) | 60 mOhm @ 3.2A, 10V | 2.2V @ 250µA | 6.7nC @ 10V | 235pF @ 15V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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