| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDZ7064AS | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 13.5A (Ta) | 5.6 mOhm @ 13.5A, 10V | 3V @ 1mA | 51nC @ 10V | 1960pF @ 15V | 2.2W | Surface Mount | 30-WFBGA | |
| IPB034N03L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 3.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPU039N03L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 50A (Tc) | 3.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| IPD031N03L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 90A (Tc) | 3.1 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPP034N03L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 3.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Through Hole | TO-220-3 | |
| IPS031N03L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 90A (Tc) | 3.1 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IPD031N03M G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 90A (Tc) | 3.1 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 94W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| PSMN2R4-30MLDX | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 70A (Tmb) | 2.4 mOhm @ 25A, 10V | 2.2V @ 1mA | 51nC @ 10V | 3264pF @ 15V | 91W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | |
| UPA2821T1L-E1-AT | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 30V | 26A | 3.8 mOhm @ 26A, 10V | - | 51nC @ 10V | 2490pF @ 10V | 1.5W | Surface Mount | 8-PowerWDFN | |
| SISA10DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 25A (Ta), 30A (Tc) | 3.7 mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2425pF @ 15V | 39W | Surface Mount | PowerPAK® 1212-8 |
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