5.4nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMN10A11GTA DIODES INC
MOSFET N-Channel, Metal Oxide 100V 1.7A (Ta) 350 mOhm @ 2.6A, 10V 4V @ 250µA 5.4nC @ 10V 274pF @ 50V 2W Surface Mount TO-261-4, TO-261AA
ZXMN10A11KTC DIODES INC
MOSFET N-Channel, Metal Oxide 100V 2.4A (Ta) 350 mOhm @ 2.6A, 10V 4V @ 250µA 5.4nC @ 10V 274pF @ 50V 2.11W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN10A11K DIODES INC
MOSFET N-Channel, Metal Oxide 100V 2.4A (Ta) 350 mOhm @ 2.6A, 10V 4V @ 250µA 5.4nC @ 10V 274pF @ 50V 2.11W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN10A11GTC DIODES INC
MOSFET N-Channel, Metal Oxide 100V 1.7A (Ta) 350 mOhm @ 2.6A, 10V 4V @ 250µA 5.4nC @ 10V 274pF @ 50V 2W Surface Mount TO-261-4, TO-261AA
BSP92P E6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 260mA (Ta) 12 Ohm @ 260mA, 10V 2V @ 130µA 5.4nC @ 10V 104pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP92P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 260mA (Ta) 12 Ohm @ 260mA, 10V 2V @ 130µA 5.4nC @ 10V 104pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
IRFML8244TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 25V 5.8A (Ta) 24 mOhm @ 5.8A, 10V 2.35V @ 10µA 5.4nC @ 10V 430pF @ 10V 1.25W Surface Mount TO-236-3, SC-59, SOT-23-3