29nC @ 10V,Gate Charge (Qg) @ Vgs
3.1W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NVD5865NLT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V - 16 mOhm @ 19A, 10V 2V @ 250µA 29nC @ 10V 1400pF @ 25V 3.1W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AON7788 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Schottky, Metal Oxide 30V 20A (Ta), 40A (Tc) 4.5 mOhm @ 20A, 10V 2V @ 250µA 29nC @ 10V 4100pF @ 15V 3.1W Surface Mount 8-PowerVDFN