253nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFH160N15T2 IXYS CORP
MOSFET N-Channel, Metal Oxide 150V 160A (Tc) 9 mOhm @ 80A, 10V 4.5V @ 1mA 253nC @ 10V 15000pF @ 25V 880W Through Hole TO-247-3
BUK6C2R1-55C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 228A (Ta) 2.3 mOhm @ 90A, 10V 2.8V @ 1mA 253nC @ 10V 16000pF @ 25V 300W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK6C3R3-75C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 181A (Ta) 3.4 mOhm @ 90A, 10V 2.8V @ 1mA 253nC @ 10V 15800pF @ 25V 300W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB