20nC @ 10V,Gate Charge (Qg) @ Vgs
TO-262-3 Long Leads, I²Pak, TO-262AA,Package / Case
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQI6N40CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 400V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 73W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI6N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 5.5A (Tc) 2 Ohm @ 2.75A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 125W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI2NA90TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 900V 2.8A (Tc) 5.8 Ohm @ 1.4A, 10V 5V @ 250µA 20nC @ 10V 680pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRFZ24NLPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 3.8W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRFZ24NL INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 3.8W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF720LPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 3.3A (Tc) 1.8 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 50W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF720L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 400V 3.3A (Tc) 1.8 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA