20.9nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN015-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 50A 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 86W Through Hole TO-220-3
PSMN015-60BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 50A (Tmb) 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 86W - -
NTMFS4943NT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.3A (Ta), 41A (Tc) 7.2 mOhm @ 30A, 10V 2.2V @ 250µA 20.9nC @ 10V 1401pF @ 15V 910mW Surface Mount 8-TDFN Exposed Pad (5 Lead)
NTMFS4943NT3G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.3A (Ta), 41A (Tc) 7.2 mOhm @ 30A, 10V 2.2V @ 250µA 20.9nC @ 10V 1401pF @ 15V 910mW Surface Mount 8-TDFN Exposed Pad (5 Lead)