196nC @ 10V,Gate Charge (Qg) @ Vgs
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AON6403 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 30V 21A (Ta), 85A (Tc) 3.1 mOhm @ 20A, 10V 2.2V @ 250µA 196nC @ 10V 9120pF @ 15V 2.3W Surface Mount 8-PowerVDFN
IRF1404PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 202A (Tc) 4 mOhm @ 121A, 10V 4V @ 250µA 196nC @ 10V 5669pF @ 25V 333W Through Hole TO-220-3
IXTR32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 18A (Tc) 385 mOhm @ 16A, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 310W Through Hole -
IXTX32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 32A (Tc) 350 mOhm @ 16A, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 890W Through Hole TO-247-3
IXTN32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 32A 350 mOhm @ 500mA, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 890W Chassis Mount SOT-227-4, miniBLOC
BSB014N04LX3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 36A (Ta), 180A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 196nC @ 10V 16900pF @ 20V 89W - 3-WDSON
IPI80N06S3L-06 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5.9 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 136W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80N06S3L-06 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5.9 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 136W Through Hole TO-220-3
IPB80N06S3L-06 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5.6 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 136W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTK32P60P IXYS CORP
MOSFET P-Channel, Metal Oxide 600V 32A (Tc) 350 mOhm @ 16A, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 890W Through Hole TO-264-3, TO-264AA