MOSFET N-Channel, Metal Oxide,FET Type
190nC @ 10V,Gate Charge (Qg) @ Vgs
67 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFK80N60P3 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 80A (Tc) 70 mOhm @ 500mA, 10V 5V @ 8mA 190nC @ 10V 13100pF @ 25V 1300W Through Hole TO-264-3, TO-264AA
IPW60R045CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 60A (Tc) 45 mOhm @ 44A, 10V 3.5V @ 3mA 190nC @ 10V 6800pF @ 100V 431W Through Hole TO-247-3
IPB80N06S2L-H5 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 4.7 mOhm @ 80A, 10V 2V @ 250µA 190nC @ 10V 5000pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP80N06S2L-H5 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5 mOhm @ 80A, 10V 2V @ 250µA 190nC @ 10V 5000pF @ 25V 300W Through Hole TO-220-3
SPB80N06S2L-H5 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5 mOhm @ 80A, 10V 2V @ 230µA 190nC @ 10V 6640pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPP80N06S2L-H5 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5 mOhm @ 80A, 10V 2V @ 230µA 190nC @ 10V 6640pF @ 25V 300W Through Hole TO-220-3
IRFH7084TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 1.25 mOhm @ 100A, 10V 3.9V @ 150µA 190nC @ 10V 6560pF @ 25V - Surface Mount 8-PowerTDFN
IRFP3710PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 200W Through Hole TO-247-3
IXFH32N50Q IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 32A (Tc) 160 mOhm @ 16A, 10V 4.5V @ 4mA 190nC @ 10V 4925pF @ 25V 416W Through Hole TO-247-3
IXFX48N50Q IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 48A (Tc) 100 mOhm @ 24A, 10V 4V @ 4mA 190nC @ 10V 7000pF @ 25V 500W Through Hole TO-247-3