| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPB10N10 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 50W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SPB10N10 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 50W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SPI10N10 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 50W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| SPP10N10 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 50W | Through Hole | TO-220-3 | |
| PSMN4R0-30YLD | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 95A (Ta) | 4 mOhm @ 25A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1272pF @ 15V | 64W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| RJK0658DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A | 11.1 mOhm @ 12.5A, 10V | - | 19.4nC @ 10V | 1580pF @ 10V | 50W | Surface Mount | 8-WFDFN Exposed Pad |
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