20V,Drain to Source Voltage (Vdss)
17nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMC2038LVT-7 DIODES INC
N and P-Channel 20V 3.7A, 2.6A 35 mOhm @ 4A, 4.5V 1V @ 250µA 17nC @ 10V 530pF @ 10V 770mW Surface Mount SOT-23-6 Thin, TSOT-23-6
HUF76013D3S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 20V 20A (Tc) 22 mOhm @ 20A, 10V 3V @ 250µA 17nC @ 10V 624pF @ 20V 50W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76013D3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 20V 20A (Tc) 22 mOhm @ 20A, 10V 3V @ 250µA 17nC @ 10V 624pF @ 20V 50W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76013P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 20V 20A (Tc) 22 mOhm @ 20A, 10V 3V @ 250µA 17nC @ 10V 624pF @ 20V 50W Through Hole TO-220-3
SI5857DU-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 5A (Ta), 6A (Tc) 58 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 10V 480pF @ 10V 10.4W Surface Mount -
SI5857DU-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 5A (Ta), 6A (Tc) 58 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 10V 480pF @ 10V 10.4W Surface Mount -
SI5947DU-T1-GE3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 6A 58 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 10V 480pF @ 10V 10.4W Surface Mount -
SI5947DU-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 6A 58 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 10V 480pF @ 10V 2.3W Surface Mount -