30V,Drain to Source Voltage (Vdss)
170nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AON6400 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 31A (Ta), 85A (Tc) 1.4 mOhm @ 20A, 10V 2.2V @ 250µA 170nC @ 10V 8300pF @ 15V 2.3W Surface Mount 8-PowerVDFN
PSMN1R8-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 12V 270W Through Hole TO-220-3
PSMN1R8-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 15V 270W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN003-30B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN003-30P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Through Hole TO-220-3
SI7459DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 6.8 mOhm @ 22A, 10V 3V @ 250µA 170nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7459DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 6.8 mOhm @ 22A, 10V 3V @ 250µA 170nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7668ADP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 31A (Ta), 40A (Tc) 3 mOhm @ 25A, 10V 1.8V @ 250µA 170nC @ 10V 8820pF @ 15V 83W Surface Mount PowerPAK® SO-8
SI7668ADP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 31A (Ta), 40A (Tc) 3 mOhm @ 25A, 10V 1.8V @ 250µA 170nC @ 10V 8820pF @ 15V 83W Surface Mount PowerPAK® SO-8