BSB012N03LX3 G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
39A
|
1.2 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
169nC @ 10V
|
16900pF @ 15V
|
2.8W
|
Surface Mount
|
3-WDSON
|
BUK7E4R0-80E,127 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
120A (Ta)
|
4 mOhm @ 25A, 10V
|
4V @ 1mA
|
169nC @ 10V
|
12030pF @ 25V
|
349W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
BUK753R8-80E,127 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
120A (Ta)
|
4 mOhm @ 25A, 10V
|
4V @ 1mA
|
169nC @ 10V
|
12030pF @ 25V
|
349W
|
Through Hole
|
TO-220-3
|
BUK763R8-80E,118 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
80V
|
120A (Ta)
|
3.8 mOhm @ 25A, 10V
|
4V @ 1mA
|
169nC @ 10V
|
12030pF @ 25V
|
357W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|