142nC @ 10V,Gate Charge (Qg) @ Vgs
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTT82N25P IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 82A (Tc) 35 mOhm @ 41A, 10V 5V @ 250µA 142nC @ 10V 4800pF @ 25V 500W Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXTQ82N25P IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 82A (Tc) 35 mOhm @ 41A, 10V 5V @ 250µA 142nC @ 10V 4800pF @ 25V 500W Through Hole TO-3P-3, SC-65-3
IXTK82N25P IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 82A (Tc) 35 mOhm @ 41A, 10V 5V @ 250µA 142nC @ 10V 4800pF @ 25V 500W Through Hole TO-264-3, TO-264AA
STB140NF55T4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 142nC @ 10V 5300pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP141NF55 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 142nC @ 10V 5300pF @ 25V 300W Through Hole TO-220-3
BSB015N04NX3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 36A (Ta), 180A (Tc) 1.5 mOhm @ 30A, 10V 4V @ 250µA 142nC @ 10V 12000pF @ 20V 89W - 3-WDSON
BUK764R0-75C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A (Tc) 4 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK754R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-220-3
BUK7E4R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
STP140NF55 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 142nC @ 10V 5300pF @ 25V 300W Through Hole TO-220-3