137nC @ 10V,Gate Charge (Qg) @ Vgs
137nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDA50N50 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 48A (Tc) 105 mOhm @ 24A, 10V 5V @ 250µA 137nC @ 10V 6460pF @ 25V 625W Through Hole TO-3P-3, SC-65-3
FDH45N50F_F133 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 45A (Tc) 120 mOhm @ 22.5A, 10V 5V @ 250µA 137nC @ 10V 6630pF @ 25V 625W Through Hole TO-3P-3, SC-65-3
FDH50N50_F133 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 48A (Tc) 105 mOhm @ 24A, 10V 5V @ 250µA 137nC @ 10V 6460pF @ 25V 625W Through Hole TO-247-3
FDH50N50 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 48A (Tc) 105 mOhm @ 24A, 10V 5V @ 250µA 137nC @ 10V 6460pF @ 25V 625W Through Hole TO-247-3
PSMN2R0-60ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Tmb) 2.2 mOhm @ 25A, 10V 4V @ 1mA 137nC @ 10V 9997pF @ 30V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN1R7-60BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Tmb) 2 mOhm @ 25A, 10V 4V @ 1mA 137nC @ 10V 9997pF @ 30V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R0-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Tmb) 2.2 mOhm @ 25A, 10V 4V @ 1mA 137nC @ 10V 9997pF @ 30V 338W Through Hole TO-220-3