12.5nC @ 10V,Gate Charge (Qg) @ Vgs
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMHC4035LSD-13 DIODES INC
2 N and 2 P-Channel (H-Bridge) 40V 4.5A (Ta) 45 mOhm @ 3.9A, 10V 3V @ 250µA 12.5nC @ 10V 574pF @ 20V 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
AO9926C ALPHA & OMEGA SEMICONDUCTOR LTD
2 N-Channel (Dual) 20V 7.6A 23 mOhm @ 7.6A, 10V 1.1V @ 250µA 12.5nC @ 10V 630pF @ 15V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SPP02N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 1.8A (Tc) 3 Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5nC @ 10V 200pF @ 25V 25W Through Hole TO-220-3
SPU02N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 1.8A (Tc) 3 Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5nC @ 10V 200pF @ 25V 25W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
SPB02N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 1.8A (Tc) 3 Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5nC @ 10V 200pF @ 25V 25W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPD02N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 1.8A (Tc) 3 Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5nC @ 10V 200pF @ 25V 25W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SPS02N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 1.8A (Tc) 3 Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5nC @ 10V 200pF @ 25V 25W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
PSMN045-80YS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 24A (Tc) 45 mOhm @ 5A, 10V 4V @ 1mA 12.5nC @ 10V 675pF @ 40V 56W Surface Mount SC-100, SOT-669, 4-LFPAK
BUK7K35-60EX NXP SEMICONDUCTORS
2 N-Channel (Dual) 60V 20.7A 30 mOhm @ 5A, 10V 4V @ 1mA 12.5nC @ 10V 794pF @ 25V 38W - -
MMDF1N05ER2G ON SEMICONDUCTOR
2 N-Channel (Dual) 50V 2A 300 mOhm @ 1.5A, 10V 3V @ 250µA 12.5nC @ 10V 330pF @ 25V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)