| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPI90N04S4-02 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 90A (Tc) | 2.5 mOhm @ 90A, 10V | 4V @ 95µA | 118nC @ 10V | 9430pF @ 25V | 150W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPI65R110CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 277.8W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPI070N06N G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 7 mOhm @ 80A, 10V | 4V @ 180µA | 118nC @ 10V | 4100pF @ 30V | 250W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK7E1R9-40E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 120A (Ta) | 1.9 mOhm @ 25A, 10V | 4V @ 1mA | 118nC @ 10V | 9700pF @ 25V | 324W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
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