| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN3033LSN-7 | DIODES INC | MOSFET N-Channel, Metal Oxide | 30V | 6A (Ta) | 30 mOhm @ 6A, 10V | 2.1V @ 250µA | 10.5nC @ 5V | 755pF @ 10V | 1.4W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| BUK9Y22-30B,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 37.7A (Tc) | 19 mOhm @ 20A, 10V | 2V @ 1mA | 10.5nC @ 5V | 940pF @ 25V | 59.4W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| SI7888DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 9.4A (Ta) | 12 mOhm @ 12.4A, 10V | 2V @ 250µA | 10.5nC @ 5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7888DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 9.4A (Ta) | 12 mOhm @ 12.4A, 10V | 2V @ 250µA | 10.5nC @ 5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI4892DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 8.8A (Ta) | 12 mOhm @ 12.4A, 10V | 800mV @ 250µA | 10.5nC @ 5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4892DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 8.8A (Ta) | 12 mOhm @ 12.4A, 10V | 800mV @ 250µA | 10.5nC @ 5V | - | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
© 2016 Copyright
