4V @ 1mA,Vgs(th) (Max) @ Id
-,Gate Charge (Qg) @ Vgs
TO-261-4, TO-261AA,Package / Case
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP298 E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP298 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP299 E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP300 E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP300 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP373 E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP373 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP299 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 500V 400mA 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BUK78150-55A,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 5.5A 150 mOhm @ 5A, 10V 4V @ 1mA - 230pF @ 25V 8W Surface Mount TO-261-4, TO-261AA
BUK78150-55A,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 5.5A (Ta) 150 mOhm @ 5A, 10V 4V @ 1mA - 230pF @ 25V 8W Surface Mount TO-261-4, TO-261AA