250V,Drain to Source Voltage (Vdss)
-,Gate Charge (Qg) @ Vgs
Through Hole,Mounting Type
21 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTP44N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 44A (Tc) - - - - - Through Hole TO-220-3
IXTQ62N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 62A (Tc) - - - - - Through Hole TO-3P-3, SC-65-3
IXTH62N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 62A (Tc) - - - - - Through Hole TO-247-3
IXTQ102N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 102A (Tc) - - - - - Through Hole TO-3P-3, SC-65-3
IXTH102N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 102A (Tc) - - - - - Through Hole TO-247-3
IXTV102N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 102A (Tc) - - - - - Through Hole TO-220-3, Short Tab
IXTC102N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V - - - - - - Through Hole -
BSN254,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN254A,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSP254A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 250V 200mA (Ta) 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads