1.8V @ 1mA,Vgs(th) (Max) @ Id
-,Gate Charge (Qg) @ Vgs
TO-226-3, TO-92-3 (TO-226AA) Formed Leads,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZVN4424ASTZ DIODES INC
MOSFET N-Channel, Metal Oxide 240V 260mA (Ta) 5.5 Ohm @ 500mA, 10V 1.8V @ 1mA - 200pF @ 25V 750mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4424ASTOA DIODES INC
MOSFET N-Channel, Metal Oxide 240V 260mA (Ta) 5.5 Ohm @ 500mA, 10V 1.8V @ 1mA - 200pF @ 25V 750mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
ZVN4424ASTOB DIODES INC
MOSFET N-Channel, Metal Oxide 240V 260mA (Ta) 5.5 Ohm @ 500mA, 10V 1.8V @ 1mA - 200pF @ 25V 750mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BS108,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BS108/01,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads