MOSFET N-Channel, Metal Oxide,FET Type
-,Gate Charge (Qg) @ Vgs
120pF @ 25V,Input Capacitance (Ciss) @ Vds
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTY02N50D IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 200mA (Tc) 30 Ohm @ 50mA, 0V - - 120pF @ 25V 1.1W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP01N100D IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 100mA (Tc) 110 Ohm @ 50mA, 0V - - 120pF @ 25V 1.1W Through Hole TO-220-3
IXTU02N50D IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 200mA (Tc) 30 Ohm @ 50mA, 0V 5V @ 25µA - 120pF @ 25V 1.1W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IXTP02N50D IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 200mA (Tc) 30 Ohm @ 50mA, 0V 5V @ 25µA - 120pF @ 25V 1.1W Through Hole TO-220-3
IXTU01N100D IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 100mA (Tc) 80 Ohm @ 50mA, 0V 5V @ 25µA - 120pF @ 25V 1.1W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IXTY01N100D IXYS CORP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 100mA (Tc) 110 Ohm @ 50mA, 0V - - 120pF @ 25V 1.1W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
BSP126,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 375mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP126,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 375mA 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP130,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 350mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BS108,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads