2.6A (Ta),Current - Continuous Drain (Id) @ 25°C
3V @ 250µA,Vgs(th) (Max) @ Id
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO3409 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 30V 2.6A (Ta) 130 mOhm @ 2.6A, 10V 3V @ 250µA 9nC @ 10V 370pF @ 15V 1.4W Surface Mount TO-236-3, SC-59, SOT-23-3
NTGS4111PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.6A (Ta) 60 mOhm @ 3.7A, 10V 3V @ 250µA 32nC @ 10V 750pF @ 15V 630mW Surface Mount SC-74, SOT-457
HTMN5130SSD-13 DIODES INC
2 P-Channel (Dual) 55V 2.6A (Ta) 200 mOhm @ 3A, 10V 3V @ 250µA 8.9nC @ 10V 218.7pF @ 25V 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTGS4111PT1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.6A (Ta) 60 mOhm @ 3.7A, 10V 3V @ 250µA 32nC @ 10V 750pF @ 15V 630mW Surface Mount SC-74, SOT-457
NTGS4111PT2G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 2.6A (Ta) 60 mOhm @ 3.7A, 10V 3V @ 250µA 32nC @ 10V 750pF @ 15V 630mW Surface Mount SC-74, SOT-457
SI2304BDS-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.6A (Ta) 70 mOhm @ 2.5A, 10V 3V @ 250µA 4nC @ 5V 225pF @ 15V 750mW Surface Mount TO-236-3, SC-59, SOT-23-3