2.5V @ 250µA,Vgs(th) (Max) @ Id
350mW,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2N7002K FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002-G COMCHIP TECHNOLOGY CORP
MOSFET N-Channel, Metal Oxide 60V 250mA (Ta) 3 Ohm @ 250mA, 10V 2.5V @ 250µA 1nC @ 10V 25pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002CK,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 1.6 Ohm @ 500mA, 10V 2.5V @ 250µA 1.3nC @ 4.5V 55pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002E VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 240mA (Ta) 3 Ohm @ 250mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 21pF @ 5V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002K-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 30pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002E-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 240mA (Ta) 3 Ohm @ 250mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 21pF @ 5V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002K-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 2 Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 30pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002E-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 240mA 3 Ohm @ 250mA, 10V 2.5V @ 250µA 0.6nC @ 4.5V 21pF @ 5V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3