| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSS8402DW-7-F | DIODES INC | N and P-Channel | 60V, 50V | 115mA, 130mA | 7.5 Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| NTJD5121NT1G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 60V | 295mA | 1.6 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | 26pF @ 20V | 250mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| NTJD5121NT2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 60V | 295mA | 1.6 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | 26pF @ 20V | 250mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| 2N7002DWA-7 | DIODES INC | 2 N-Channel (Dual) | 60V | 180mA | 8 Ohm @ 115mA, 5V | 2.5V @ 250µA | 0.87nC @ 10V | 22pF @ 25V | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| BSS8402DW-7 | DIODES INC | N and P-Channel | 60V, 50V | 115mA, 130mA | 7.5 Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| PMGD780SN,115 | NXP SEMICONDUCTORS | 2 N-Channel (Dual) | 60V | 490mA | 920 mOhm @ 300mA, 10V | 2.5V @ 250µA | 1.05nC @ 10V | 23pF @ 30V | 410mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SSM6N7002FU(TE85LF) | TOSHIBA CORP | 2 N-Channel (Dual) | 60V | 200mA | 3 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 17pF @ 25V | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SQ1420EEH-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 1.6A (Tc) | 140 mOhm @ 1.2A, 10V | 2.5V @ 250µA | 4nC @ 4.5V | 215pF @ 25V | 3.3W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SQ1421EEH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 1.6A (Tc) | 290 mOhm @ 2A, 10V | 2.5V @ 250µA | 5.4nC @ 4.5V | 355pF @ 25V | 3.3W | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SI1426DH-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 2.8A (Ta) | 75 mOhm @ 3.6A, 10V | 2.5V @ 250µA | 3nC @ 4.5V | - | 1W | Surface Mount | 6-TSSOP, SC-88, SOT-363 |
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