2.5V @ 1mA,Vgs(th) (Max) @ Id
Through Hole,Mounting Type
26 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
VN10LP DIODES INC
MOSFET N-Channel, Metal Oxide 60V 270mA (Ta) 5 Ohm @ 500mA, 10V 2.5V @ 1mA - 60pF @ 25V 625mW Through Hole TO-226-3, TO-92-3 (TO-226AA)
VN10LPSTOA DIODES INC
MOSFET N-Channel, Metal Oxide 60V 270mA (Ta) 5 Ohm @ 500mA, 10V 2.5V @ 1mA - 60pF @ 25V 625mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
VN10LPSTOB DIODES INC
MOSFET N-Channel, Metal Oxide 60V 270mA (Ta) 5 Ohm @ 500mA, 10V 2.5V @ 1mA - 60pF @ 25V 625mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BTS121A E3045A INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 22A (Tc) 100 mOhm @ 9.5A, 4.5V 2.5V @ 1mA - 1500pF @ 25V 95W Through Hole TO-220-3
BTS115A INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 50V 15.5A (Tc) 120 mOhm @ 7.8A, 4.5V 2.5V @ 1mA - 735pF @ 25V 50W Through Hole TO-220-3
BTS121A INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 22A (Tc) 100 mOhm @ 9.5A, 4.5V 2.5V @ 1mA - 1500pF @ 25V 95W Through Hole TO-220-3
BTS113A INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 40W Through Hole TO-220-3
BTS113A E3064 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 40W Through Hole TO-220-3
PHP101NQ03LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 5.5 mOhm @ 25A, 10V 2.5V @ 1mA 23nC @ 5V 2180pF @ 25V 166W Through Hole TO-220-3
PHU101NQ03LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 5.5 mOhm @ 25A, 10V 2.5V @ 1mA 23nC @ 5V 2180pF @ 25V 166W Through Hole TO-251-3 Long Leads, IPak, TO-251AB