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2.5V @ 1.2mA,Vgs(th) (Max) @ Id

4 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

EPC2007 EPCOS AG

GaNFET N-Channel, Gallium Nitride 100V 6A (Ta) 30 mOhm @ 6A, 5V 2.5V @ 1.2mA 2.1nC @ 5V 205pF @ 50V - Surface Mount Die Outline (5-Solder Bar)

EPC1007 EPCOS AG

GaNFET N-Channel, Gallium Nitride 100V 6A (Ta) 30 mOhm @ 6A, 5V 2.5V @ 1.2mA 2.7nC @ 5V 200pF @ 50V - Surface Mount Die

EPC1009 EPCOS AG

GaNFET N-Channel, Gallium Nitride 60V 6A (Ta) 30 mOhm @ 6A, 5V 2.5V @ 1.2mA 2.4nC @ 5V 196pF @ 30V - Surface Mount Die

EPC1010 EPCOS AG

GaNFET N-Channel, Gallium Nitride 200V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 1.2mA 7.5nC @ 5V 440pF @ 100V - Surface Mount Die

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
EPC2007	EPCOS AG	GaNFET N-Channel, Gallium Nitride	100V	6A (Ta)	30 mOhm @ 6A, 5V	2.5V @ 1.2mA	2.1nC @ 5V	205pF @ 50V	-	Surface Mount	Die Outline (5-Solder Bar)
EPC1007	EPCOS AG	GaNFET N-Channel, Gallium Nitride	100V	6A (Ta)	30 mOhm @ 6A, 5V	2.5V @ 1.2mA	2.7nC @ 5V	200pF @ 50V	-	Surface Mount	Die
EPC1009	EPCOS AG	GaNFET N-Channel, Gallium Nitride	60V	6A (Ta)	30 mOhm @ 6A, 5V	2.5V @ 1.2mA	2.4nC @ 5V	196pF @ 30V	-	Surface Mount	Die
EPC1010	EPCOS AG	GaNFET N-Channel, Gallium Nitride	200V	12A (Ta)	25 mOhm @ 6A, 5V	2.5V @ 1.2mA	7.5nC @ 5V	440pF @ 100V	-	Surface Mount	Die

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