5.8 mOhm @ 20A, 10V,Rds On (Max) @ Id, Vgs
2.2V @ 250µA,Vgs(th) (Max) @ Id
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO4576 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 20A (Ta) 5.8 mOhm @ 20A, 10V 2.2V @ 250µA 22.5nC @ 10V 951pF @ 15V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
BSZ058N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 15A (Ta), 40A (Tc) 5.8 mOhm @ 20A, 10V 2.2V @ 250µA 30nC @ 10V 2400pF @ 15V 45W Surface Mount 8-PowerTDFN
SIZ910DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 22A, 32A 5.8 mOhm @ 20A, 10V 2.2V @ 250µA 40nC @ 10V 1500pF @ 15V 4.6W, 5.2W Surface Mount 8-PowerWDFN