| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD25213W10 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 20V | 1.6A | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 1W | Surface Mount | 4-UFBGA, DSBGA | |
| SI3981DV-T1-GE3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.6A | 185 mOhm @ 1.9A, 4.5V | 1.1V @ 250µA | 5nC @ 4.5V | - | 800mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI3981DV-T1-E3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.6A | 185 mOhm @ 1.9A, 4.5V | 1.1V @ 250µA | 5nC @ 4.5V | - | 800mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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