| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN9R5-100PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 89A | 9.6 mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | 4454pF @ 50V | 211W | Through Hole | TO-220-3 | |
| BUK6210-55C,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 78A | 9.6 mOhm @ 15A, 10V | 2.8V @ 1mA | 63nC @ 10V | 4000pF @ 25V | 128W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| PSMN9R5-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 89A (Tmb) | 9.6 mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | 4454pF @ 50V | 211W | - | - | |
| RJK03M7DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 30V | 30A | 9.6 mOhm @ 15A, 10V | - | 6.6nC @ 4.5V | 1120pF @ 10V | 25W | Surface Mount | 8-WFDFN Exposed Pad | |
| CSD87588N | TEXAS INSTRUMENTS INC | 2 N-Channel (Half Bridge) | 30V | 15A | 9.6 mOhm @ 15A, 10V | 1.9V @ 250µA | 4.1nC @ 4.5V | 736pF @ 15V | 6W | Surface Mount | 5-XFLGA |
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