| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSO072N03S | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 12A (Ta) | 6.8 mOhm @ 15A, 10V | 2V @ 45µA | 25nC @ 5V | 3230pF @ 15V | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF6610TR1 | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 20V | 15A (Ta), 66A (Tc) | 6.8 mOhm @ 15A, 10V | 2.55V @ 250µA | 17nC @ 4.5V | 1520pF @ 10V | 2.2W | Surface Mount | - | |
| IRF6610TR1PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 20V | 15A (Ta), 66A (Tc) | 6.8 mOhm @ 15A, 10V | 2.55V @ 250µA | 17nC @ 4.5V | 1520pF @ 10V | 2.2W | Surface Mount | - | |
| IRLU8203PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 110A (Tc) | 6.8 mOhm @ 15A, 10V | 3V @ 250µA | 50nC @ 4.5V | 2430pF @ 15V | 140W | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | |
| IRF6610 | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 20V | 15A (Ta), 66A (Tc) | 6.8 mOhm @ 15A, 10V | 2.55V @ 250µA | 17nC @ 4.5V | 1520pF @ 10V | 2.2W | Surface Mount | - | |
| IRF6610TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 20V | 15A (Ta), 66A (Tc) | 6.8 mOhm @ 15A, 10V | 2.55V @ 250µA | 17nC @ 4.5V | 1520pF @ 10V | 2.2W | Surface Mount | - | |
| PSMN7R0-100XS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 55A (Tmb) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 121nC @ 10V | 6686pF @ 50V | 57.7W | Through Hole | TO-220-3 Isolated Tab | |
| PSMN7R0-100ES,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 100A | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 269W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN7R0-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 100A (Tmb) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 269W | - | - | |
| SISA16DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 16A (Ta) | 6.8 mOhm @ 15A, 10V | 2.3V @ 250µA | 47nC @ 10V | 2060pF @ 15V | 3.5W | Surface Mount | PowerPAK® 1212-8 |
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