| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP065N04N G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 50A (Tc) | 6.5 mOhm @ 50A, 10V | 4V @ 200µA | 34nC @ 10V | 2800pF @ 20V | 68W | Through Hole | TO-220-3 | |
| IXFX250N10P | IXYS CORP | MOSFET N-Channel, Metal Oxide | 100V | 250A (Tc) | 6.5 mOhm @ 50A, 10V | 5V @ 1mA | 205nC @ 10V | 16000pF @ 25V | 1250W | Through Hole | TO-247-3 | |
| IXFK250N10P | IXYS CORP | MOSFET N-Channel, Metal Oxide | 100V | 250A (Tc) | 6.5 mOhm @ 50A, 10V | 5V @ 1mA | 205nC @ 10V | 16000pF @ 25V | 1250W | Through Hole | TO-264-3, TO-264AA | |
| BUK9907-40ATC,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 75A | 6.5 mOhm @ 50A, 10V | 2V @ 1mA | - | 5836pF @ 25V | 272W | Through Hole | TO-220-5 |
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