4.2 mOhm @ 41A, 10V,Rds On (Max) @ Id, Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NP82N04NDG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A 4.2 mOhm @ 41A, 10V 2.5V @ 250µA 150nC @ 10V 9000pF @ 25V 1.8W Through Hole TO-262-3 Full Pack, I²Pak
NP82N04NUG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A (Tc) 4.2 mOhm @ 41A, 10V 4V @ 250µA 160nC @ 10V 9750pF @ 25V 1.8W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
NP82N04NLG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A (Tc) 4.2 mOhm @ 41A, 10V 2.5V @ 250µA 150nC @ 10V 9000pF @ 25V 1.8W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
NP82N04MDG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A (Tc) 4.2 mOhm @ 41A, 10V 2.5V @ 250µA 150nC @ 10V 9000pF @ 25V 1.8W Through Hole TO-220-3
NP82N04MLG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A (Tc) 4.2 mOhm @ 41A, 10V 2.5V @ 250µA 150nC @ 10V 9000pF @ 25V 1.8W Through Hole TO-220-3
NP82N04MUG-S18-AY RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 40V 82A (Tc) 4.2 mOhm @ 41A, 10V 4V @ 250µA 160nC @ 10V 9750pF @ 25V 1.8W Through Hole TO-220-3